CNRS Research Scientist (CRCN)
Konstantinos Pantzas received received a Ph.D. in Physics from the University of Lorraine in 2013 and Ph.D in Electrical and Computer Engineering from the Georgia Institue of Technology in 2015, for his work on epitaxy of Indium Gallium Nitride alloys and their use for high effiecincy, cost-effective solar cells. He carrried out his post-doctoral work on semiconductor direct wafer bonding and quantitative transmission electron mocroscopy at Laboratoire de Photonique et des Nanostructures, now C2N. He joined C2N as a permanent researcher in 2016. His research interests encompass Metal-organic chemical vapor epitaxy (MOVPE) of III-V semiconductors relevant for photonics and atomic-scale characterisation of semiconductor materials using quantuitative transmission electron microscpy. Exemples of his activities include the development of direct-gap Group IV alloys using MOVPE for near and midinfrared CMOS compatible photonics, (In,Al,Ga)As superlattices on InP for midinfrared photonics using quantum cascade devices, GaP for integrated non-linear photonics, and the use of HAADF-STEM and EDX for atomically-resoplved mappings of composition and strain in semiconductor alloys. He currently holds an ERC Consolidator Grant (ERC-COG-2022 PANDORA) for the development of nonlinear integrated circuits using orientation-patterned gallium phosphide.
For a complete list of publications please consult ORCID or Google Scholar. Also on ResearchGate.
Email address
konstantinos.pantzas...c2n.upsaclay.fr
Office number
C219
Address
C2N
10 Bd Thomas Gobert
91120 Palaiseau FRANCE
also at:
TRT
1 Av Augustin Fresnel
91120 Palaiseau FRANCE
Phone number
+33 (0) 1 70 27 04 60
+33 (0) 1 69 41 59 94 (TRT)
Research areas
